ADEM Publications, Presentations and other output

ADEM--14-085

Title:

The Nature and the Kinetics of Light-Induced Defect Creation in Hydrogenated Amorphous Silicon Films and Solar Cells

Author(s)

Melskens, Jimmy;

Identification

ISBN

DOI

10.1109/JPHOTOV.2014.2349655

Publication date

2014-11-01

Number of pages

6

Full text

PDF

Abstract

The nature and the kinetics of light-induced defect creation in hydrogenated amorphous silicon (a-Si:H) films and solar cells are investigated by means of Doppler broadening positron annihilation spectroscopy, Fourier transform photocurrent spectroscopy, and J–V characterization. There is a strong correlation between the open volume deficiencies in a-Si:H and the Staebler– Wronski effect (SWE). The carrier generation and recombination profiles in the absorber layer are spatially correlated, and the recombination due to defects in the top and bottom parts of the absorber layer is different. Furthermore, the various defect distributions in the bandgap have different defect creation kinetics. It is demonstrated that the SWE defect formation kinetics in a solar cell are very complex and can impossibly be described by one time scaling ∼tβ as is often claimed.